[18p-PB1-1~84] 10 Spintronics and Magnetics (Poster)

▼ [18p-PB1-6] Fabrication of fully epitaxial Co2Fe(Ga,Ge)/Ge/CoFe trilayer structure

〇Taichiro Yoshida¹, Masaki Inoue¹, Tetsuya Uemura¹ (1.Hokkaido Univ.)

Keywords:semiconductor spintronics

A vertical structure consisting of F/SC/F, where F is a ferromagnetic material and SC is a semiconductor, has attracted much interest for novel semiconductor-based spintronic devices, such as a vertical-type spin transistor or magnetoresistive devices, similar to magnetic tunnel junction or giant magnetoresistance (GMR) devices. However, it is not easy to fabricate a single crystalline semiconductor material on a ferromagnetic metal, there has been very few reports on the fabrication of such structures: Fe₃Si/Ge/CoFe [1] and Co₂FeSi/Ge/Co₂Fe/Si [2]. Recently, relatively high MR ratios of 82% at room temperature was reported in Co₂Fe(Ga,Ge) (CFGG)–based GMR device [3], indicating that CFGG is a highly spin-polarized ferromagnetic material. Given these background, the purpose of the present study is to fabricate a fully epitaxial CFGG/Ge/CoFe trilayer structure.
[1] M. Ikawa et al., J. Cryst. Growth 468, 676 (2017).
[2] M. Kawano et al., J. Appl. Phys. 119, 045302 (2016).
[3] J. W. Jung et al., Appl. Phys. Lett. 108, 102408 (2016).