[18p-PB4-1~12] 15.7 Crystal characterization, impurities and crystal defects

[18p-PB4-10] Evaluation of strained SiC wafer by Raman scattering spectroscopy 2

〇(M2)Yuuki Ogura¹, Shinsuke Sakai² (1.Chiba Inst. of Tech, 2.Success Ltd)

Keywords:Silicon carbide, Raman scattering spectroscopy, Stress

From the viewpoint of cost reduction, it is important to increase the diameter of the SiC wafer. We reported the results of evaluating the 4H-SiC wafer, which is considered to have large warpage and large distortion, by Raman scattering spectroscopy at The 79th JSAP Autumn Meeting 2018. In addition, since the SiC wafer is deformed into two states of the stable state and the metastable state as shown in Fig.1 of the proceedings, the change over time of the wafer was observed by repeating this deformation.