[18p-PB4-1~12] 15.7 Crystal characterization, impurities and crystal defects

[18p-PB4-11] Characterization of Carrier Recombination Levels in Nitrogen δ-Doped GaAs Superlattices by Two- Wavelength Excited Photoluminescence Method

〇Kota Nagata¹, Kamata Norihiko¹, Yagi Syuuhei¹, Yaguchi Hiroyuki¹ (1.Saitama Univ.)

Keywords:defect level