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[18p-PB4-9] Evaluation of SiC-SBD by multifunctional scanning probe microscope 3
Keywords:power device, scanning probe microscope
In this paper, we report the evaluation of SiC-SBD (Schottky Barrier Diode) by multifunctional scanning probe microscopy (SPM). The device is expected to have an n−-layer to maintain the breakdown voltage and a p-layer in the termination structure to achieve a breakdown voltage of 1000 V class.The measurement of the place where this p-layer can be guessed will be carried out and will be announced.