[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-32] Improvement of fixed charge density of low temperature SiN:F/SiO:F for oxide-TFT

〇Toshihiko Sakai¹, Ryota Andoh¹, Yoshitaka Setoguchi¹, Yasunori Andoh¹, Toshiyuki Samejima² (1.Nissin Electric Co., Ltd, 2.Tokyo Univ. of Agric. & Tech.)

Keywords:oxide-TFT, fixed charge density

We evaluated SiN:F/SiO:F stacked films for oxide-TFTs using our G6 size inductively coupled plasma CVD equipment, and good characteristics such as a fixed charge density of 2.5×10¹¹cm^-2 were obtained under low temperature film forming conditions of a substrate temperature of 200 degrees C.