The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E301 (E301)

Masashi Kato(Nagoya Inst. of Tech.)

10:00 AM - 10:15 AM

[19a-E301-2] Demonstration of 1200 V vertical GaN planar MOSFET fabricated by all ion implantation process

Ryo Tanaka1, Shinya Takashima1, Katsunori Ueno1, Hideaki Matsuyama1, Yuta Fukushima1, Masaharu Edo1, Kiyokazu Nakagawa2 (1.Fuji Electric, 2.Univ. of Yamanashi)

Keywords:Gallium Nitride, Ion implantation, MOSFET

We report the characteristics of vertical GaN planar MOSFET formed by all ion implantation process. The active region had a microstructure with a channel length of 1 um and a cell pitch of 5 um, and was formed by Mg ion implantation (I/I) into the p-well region, Si I/I into the source region, and O I/I into the JFET region. The fabricated MOSFET showed the normal MOS channel behaviors. The on-resistance was 2.78 mΩ cm2, the threshold voltage was about 2.5 V, and the breakdown voltage was about 1200 V. Thus, it has been demonstrated that the vertical GaN planar MOSFET with low on-resistance and high breakdown voltage can be realized.