The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19a-E301-1~9] 13.7 Compound and power electron devices and process technology

Thu. Sep 19, 2019 9:00 AM - 12:00 PM E301 (E301)

Masashi Kato(Nagoya Inst. of Tech.)

10:15 AM - 10:30 AM

[19a-E301-3] Fully ion implanted normally-off GaN DMOSFETs-2

Michitaka Yoshino1, Yuto Ando2, Manato Deki3, Toru Toyabe4, Kazuo Kuriyama1, Yoshio Honda3, Tomoaki Nishimura1, Hiroshi Amano2,3, Tetsu Kachi3, Tohru Nakamura1,3 (1.Hosei Univ., 2.Nagoya Univ., 3.Nagoya Univ. IMaSS, 4.Toyo Univ.)

Keywords:GaN, DMOSFET, Ion implantation

自立GaN基板にイオン注入法でp型とn型層を形成し,DMOSFETを作製した.イオン注入p型層の均一性を,DMOSFETの閾値分布によって検討したので,その結果について報告する.