[19a-E305-1~12] 13.3 絶縁膜技術

▲ [19a-E305-12] Evaluation of surface potential of ferroelectric-gate MOS capacitors
by C-V analyses

〇(M2)Chenyu Liao¹、Kasidit Toprasertpong¹、Taichirou Fukui¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.The Univ. of Tokyo)

キーワード：ferroelectric-gate

MOSFETs using HfO2-based-ferroelectric gate insulators have been expected as a steep slope device, because of the negative capacitance (NC) effect, which could be stabilized when placed in series with a paraelectric insulator in theory. However, the reality of the quasi-static NC effect, predicted by the theory, has still been controversial. In order to verify the quasi-static NC effect, the accurate determination of the surface potential (φs) with changing gate voltage (Vg) is necessary. In this study, thus, we examine to evaluate φ_s of metal/ferroelectric/ Si (MFS) and metal/ferroelectric/insulator/Si (MFIS) capacitors with HfZrO₂ as a function of V_g and the sensitivity (Δφ_s/ΔV_g) through the capacitance-V_g analyses.