[19a-PB5-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19a-PB5-14] Fabrication of mid-infrared LED using InAs/GaAsSb type-Ⅱ super-lattice structures on InP substrates

〇Ko Uno¹, Naoto Iijima¹, Koichi Yamaguchi¹ (1.Univ. of Electro-Comm.)

Keywords:semiconductor, type-II structure, mid-infrared emission