[19a-PB5-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19a-PB5-15] High-temperature crystallization in droplet epitaxial growth of InAs quantum dot on InP(111)A

〇Takaaki Mano¹, Neul Ha¹, Takashi Kuroda¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (1.NIMS)

Keywords:Quantum dot, Droplet epitaxy, Molecular beam epitaxy

We are investigating the formation of highly-symmetric InAs QDs on InP(111)A substrates by droplet epitaxy for the application of entangled photon emitters at telecom wavelengths. In order to improve the quality of InAs QDs, we introduced high-temperature crystallization process. We found that InAs QDs can be formed by crystallization of In droplets at 350^oC.