Theoretical study for the adsorption-desorption behavior at the step-edge of GaN(0001) surfaces during MOVPE growth

Takumi Ohka; Toru Akiyama; Abdul-Muizz Pradipto; Kohji Nakamura; Tomonori Ito

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[19a-PB5-1~19] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 19, 2019 9:30 AM - 11:30 AM PB5 (PB)

9:30 AM - 11:30 AM

[19a-PB5-18] Theoretical study for the adsorption-desorption behavior at the step-edge of GaN(0001) surfaces during MOVPE growth

〇Takumi Ohka¹, Toru Akiyama¹, Abdul-Muizz Pradipto¹, Kohji Nakamura¹, Tomonori Ito¹ (1.Mie Univ.)

Keywords:Step-flow growth, Ehrlich-Schwoebel barrier, adsorption-desorption

We clarify the adsorption-desorption and migration behavior of Ga and N atoms at the step-edge of GaN(0001) surfaces assuming MOVPE growth conditions. In addition, investigate the relationship between ESB and step-flow growth.