2019年第80回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.6 ナノ構造・量子現象・ナノ量子デバイス

[19p-C309-1~16] 13.6 ナノ構造・量子現象・ナノ量子デバイス

2019年9月19日(木) 13:45 〜 18:30 C309 (C309)

井原 章之(情通機構)、中岡 俊裕(上智大)

15:00 〜 15:15

[19p-C309-4] Size Optimization of InAs Quantum Well Islands for Photon Upconversion Applications

〇(P)Ronel Intal Roca1、Itaru Kamiya1 (1.Toyota Tech. Inst.)

キーワード:InAs, Upconversion, Quantum Well Islands

Disk-like InAs Quantum well islands (QWIs) have been shown to exhibit efficient photon upconversion and is one of the candidate systems for intermediate-band solar cell (IBSC) applications. In this report, the size dependence of the upconversion efficiency of QWI is investigated by photoluminescence measurements. By using a sample with a thickness gradient in the InAs layer and therefore varying sizes of QWIs, it was found that the upconversion efficiency increases with the decreasing size of the QWIs, with a peak upconversion efficiency of ~0.1%. Furthermore, the power dependence of the upconversion intensity showed a superlinear trend, which agrees with previous reports. These results give insight to the size dependence of the upconversion process in QWIs.