[19p-E206-1~19] 3.15 Silicon photonics

[19p-E206-14] Alloy formation with Si cap layer at Ge mesa sidewalls selectively grown on Si

〇(M2)Kazuki Kawashita¹, Riku Katamawari¹, Moise Sotto¹, Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech.)

Keywords:germanium, silicon germanium, natural formation

Ge layer epitaxially grown on Si is used as a photodetector material in Si photonics, and also studied for optical modulators and lasers. In this study, natural formation of SiGe alloy is reported on the sidewall of selectivelly-grown Ge mesa structure at the interface with Si cap layer. Band engineering using such a naturally formed SiGe layer is discussed.