5:15 PM - 5:30 PM
[19p-E206-14] Alloy formation with Si cap layer at Ge mesa sidewalls selectively grown on Si
Keywords:germanium, silicon germanium, natural formation
Ge layer epitaxially grown on Si is used as a photodetector material in Si photonics, and also studied for optical modulators and lasers. In this study, natural formation of SiGe alloy is reported on the sidewall of selectivelly-grown Ge mesa structure at the interface with Si cap layer. Band engineering using such a naturally formed SiGe layer is discussed.