[19p-E206-1~19] 3.15 Silicon photonics

△ [19p-E206-15] Selective-area chemical vapor deposition of Ge on SiN_x layers

〇(M1)Yuki Ueno¹, Ryota Oyamada¹, Shun Sasaki², Tetsuya Nakai², Yasuhiko Ishikawa¹ (1.Toyohashi Univ. Tech., 2.SUMCO)

Keywords:silicon photonics, silicon nitride, germanium

In Si photonics, SOI (Si-on-insulator) substrate is usually used in the device fabrication. As a new platform replacing SOI, SiN_x/SiO₂ layered structures on bulk Si substrate have been investigated. However, there is a disadvantage in the integration with Ge photodetectors. In this study, direct deposition of Ge on SiN_x layer is examined toward the integration of SiN_x optical waveguide and Ge devices. Selective area deposition of Ge with SiO₂ masks is reported, and the structural property is measured.