[19p-E302-1~8] Advanced ion microscopy? Application for future nano scale materials and devices

▲ [19p-E302-3] Enabling MoS₂ memtransistors via localised helium ion beam irradiation

Jakub Jadwiszczak^1,2,3,4, Darragh Keane^1,5, Pierce Maguire^1,2, Yangbo Zhou⁴, Hua-Ding Song³, John Boland^1,5, Georg Duesberg⁶, Zhimin Liao³, 〇Hongzhou Zhang^1,2 (1.CRANN and AMBER, TCD, 2.Physics, TCD, 3.Peking Univ., 4.Nanchang Univ., 5.Chemistry, TCD, 6.UniBwM)

Keywords:Helium Ion Microscopy, MoS2, Memristors

Memristors are two-terminal switches which can retain a state of internal electrical resistance based on the history of applied voltage and current. They are the key to neuromorphic hardware and in-memory processing. Recently, resistive switching has been observed over a naturally-occurring grain boundary in MoS₂ monolayers. However, their performance needs to be significantly improved, and viable approaches to incorporate them into the existing silicon technologies are yet to be developed. In this work, we demonstrate a MoS₂-based memristor via helium ion beam irradiation. The localized ion irradiation introduces site-specific sulphur vacancies in the MoS₂ flake. The migration of the vacancies under the external electric field induces the resistance switching. We will discuss the viability of further device optimization and large-scale integration.