[19p-E302-1~8] 先端イオン顕微鏡技術って何？ナノスケール材料・デバイスへの展開

▲ [19p-E302-3] Enabling MoS₂ memtransistors via localised helium ion beam irradiation

Jakub Jadwiszczak^1,2,3,4、Darragh Keane^1,5、Pierce Maguire^1,2、Yangbo Zhou⁴、Hua-Ding Song³、John Boland^1,5、Georg Duesberg⁶、Zhimin Liao³、〇Hongzhou Zhang^1,2 (1.CRANN and AMBER, TCD、2.Physics, TCD、3.Peking Univ.、4.Nanchang Univ.、5.Chemistry, TCD、6.UniBwM)

キーワード：Helium Ion Microscopy, MoS2, Memristors

Memristors are two-terminal switches which can retain a state of internal electrical resistance based on the history of applied voltage and current. They are the key to neuromorphic hardware and in-memory processing. Recently, resistive switching has been observed over a naturally-occurring grain boundary in MoS₂ monolayers. However, their performance needs to be significantly improved, and viable approaches to incorporate them into the existing silicon technologies are yet to be developed. In this work, we demonstrate a MoS₂-based memristor via helium ion beam irradiation. The localized ion irradiation introduces site-specific sulphur vacancies in the MoS₂ flake. The migration of the vacancies under the external electric field induces the resistance switching. We will discuss the viability of further device optimization and large-scale integration.