2019年第80回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

13 半導体 » 13.3 絶縁膜技術

[19p-E305-1~15] 13.3 絶縁膜技術

2019年9月19日(木) 13:45 〜 17:45 E305 (E305)

入沢 寿史(産総研)、小林 清輝(東海大)

17:30 〜 17:45

[19p-E305-15] Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy

〇(DC)Weichen Wen1、Keisuke Yamamoto1、Dong Wang1、Hiroshi Nakashima2 (1.IGSES, Kyushu Univ.、2.GIC, Kyushu Univ.)

キーワード:Border trap, DLTS, Ge MOS

Interface traps (ITs) and border traps (BTs) in Al2O3/GeOx/p-Ge gate stacks were characterized using deep-level transient spectroscopy (DLTS). Through evaluating the gate stacks with several thicknesses of GeOx, the BTs in Al2O3, at Al2O3/GeOx interface, in GeOx were detected. The highest density of BT was found at Al2O3/GeOx interface.