[19p-E308-1~13] 17.3 Layered materials

[19p-E308-10] Effect of the off-cut direction of Si (111) vicinal substrate on 2D-In₂Se₃ growth

〇Kei Kawakatsu¹, Yu-Cian Wang¹, Nobuaki Kojima¹, Yoshio Ohshita¹, Masashi Yamaguchi¹ (1.ToyotaTech. Inst.)

Keywords:III-VI semiconductor, layerd material, MBE growth

In our previous work, it is reported that suppression of 2D- In₂Se₃ twin domain by using the Si (111) 4° vicinal substrate toward [11-2]. In the study, we demonstrated the twin suppression dependent of off-cut directions of Si (111) vicinal substrates toward [11-2] and [1-10].