The 80th JSAP Autumn Meeting 2019

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-E310-1~20] 15.4 III-V-group nitride crystals

Thu. Sep 19, 2019 1:15 PM - 7:00 PM E310 (E310)

Tsutomu Araki(Ritsumeikan Univ.), Ryuji Katayama(Osaka Univ.), Ryota Ishii(Kyoto Univ.)

4:30 PM - 4:45 PM

[19p-E310-12] Dependence of internal quantum efficiency on well width and barrier Al composition in AlGaN multiple quantum well structures

〇Yuki Akamatsu1, Atsushi Fujii1, Satoshi Kurai1, Hideaki Murotani2, Hideto Miyake3, Yoichi Yamada1 (1.Yamaguchi Univ., 2.NIT,Tokuyama Coll., 3.Mie Univ.)

Keywords:AlGaN, Internal quantum efficiency, Quantum well