[19p-E311-1~14] 6.3 Oxide electronics

△ [19p-E311-9] The method of evaluating gas barrier performances using ITO, IZO and AZO films

〇(M1)Keisuke Tsushima¹, Makoto Kashiwagi¹, Junjun Jia², Daisuke Ono³, Shigeki Matsunaka³, Yuzo Shigesato¹ (1.Aoyama Gakuin Univ., 2.Waseda Univ., 3.Shibaura Mechatronics)

Keywords:transparent conductive oxide, gas barrier films

Flexible electronic devices using polymer substrates such as PET or PC has been developed, where such polymer films have poor barrier properties. Because of the instability of these device materials against atmospheric H₂O and O₂, it is necessary to improve the gas barrier films with a low oxygen and water vapor transmission rate. In this study, ZTO or SiN_x films were deposited on transparent conductive oxide (TCO) films, such as ITO, IZO, AZO-coated glass substrates, by magnetron sputtering. Carrier density of these TCO under layers was analyzed by Hall-effect measurement before and after post-annealing in air. Oxidation barrier performance of ZTO or SiN_x films was evaluated quantitatively by measuring the decrease in carrier density (n) of these TCO under-layers, which was caused by the extinction of the oxygen vacancies. As the results, oxygen or vapor gases barrier properties of these films were evaluated successfully.