Critical thickness of strained Si<sub>1-x</sub>Ge<sub>x</sub> on Ge-on-Si(111) and Ge(111) substrates

Youya Wagatsuma; Md. M. Alam; Kazuya Okada; Yusuke Hoshi; Michihiro Yamada; Kohei Hamaya; Kentarou Sawano

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[19p-E313-1~9] 15.5 Group IV crystals and alloys

Thu. Sep 19, 2019 1:30 PM - 3:45 PM E313 (E313)

Masashi Kurosawa(Nagoya Univ.)

2:15 PM - 2:30 PM

[19p-E313-4] Critical thickness of strained Si_1-xGe_x on Ge-on-Si(111) and Ge(111) substrates

〇Youya Wagatsuma¹, Md. M. Alam¹, Kazuya Okada¹, Yusuke Hoshi¹, Michihiro Yamada², Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Advanced Research Laboratories, Tokyo City Univ., 2.Grad. Sch. Eng. Sci., Osaka Univ., 3.CSRN, Osaka Univ.)

Keywords:germanium

« Previous in this session
Next in this session »

▲

Presentation information

[19p-E313-1~9] 15.5 Group IV crystals and alloys

[19p-E313-4] Critical thickness of strained Si1-xGex on Ge-on-Si(111) and Ge(111) substrates

[19p-E313-4] Critical thickness of strained Si_1-xGe_x on Ge-on-Si(111) and Ge(111) substrates