[19p-E313-1~9] 15.5 Group IV crystals and alloys

△ [19p-E313-5] Study on critical thickness of SiGe on Si(110) substrate

〇(M2)Shingo Saito¹, Yuichi Sano¹, Keisuke Arimot¹, Junji Yamanaka¹, Kosuke o. Hara¹, Kiyokazu Nakagawa¹ (1.Yamanashi Univ.)

Keywords:ctritical thickness, SiGe, strian

Mobility improvement is effective in improving the performance of electronic devices. According to previous studies, high hole mobility is obtained for (110) plane strained Si thin film in “strained Si / SiGe / Si (110)” structure. In order to obtain higher mobility, it is necessary to improve surface flatness. It is known that surface morphology due to micro twins in the crystal appears in the (110) plane strained Si thin film. In order to form a high quality film, further knowledge of surface morphology affecting crystal defects and mobility of the SiGe layer becomes important. The critical thickness of Si (110) is expected to be smaller than that of Si (001). In this study, changes in surface shape and relaxation rate with progress of crystal growth of a sample of SiGe / Si (110) structure having a Ge composition of about 10 to 30% are investigated.