[19p-PB2-1~7] 13.5 デバイス／配線／集積化技術

▲ [19p-PB2-1] Performance enhancement of extremely thin body SiGe or Ge on insulator pMOSFETs fabricated by Ge condensation

〇(DC)KwangWon Jo¹、Takagi Shinichi¹、Mitsuru Takenaka¹ (1.The Univ. of Tokyo)

キーワード：Ge-on-Insulator, Strain, Ge condensation

Ultrathin GOI and SGOI MOSFETs have attracted much attention as p-channel devices, because of the high hole mobility (μ_h) with suppression of short channel effects. Here, strain engineering also plays a key factor to enhance the performance of pMOSFET. On the other hand, compressive strain (ε_c) can be easily relaxed in high Ge fractions because of various crystal defects induced during the Ge condensation . We have succeeded in suppression of strain relaxation thorough an improved condensation method, composed of slow-cooling and a thinned initial SiGe layer in the previous report [2]. By employing this method, μ_h of 467 cm²/Vs was obtained for 10 nm-thick GOI pMOSFETs with ε_c of ~1.75 % . In this work, thinning of GOI and SGOI films fabricated by this condensation process is conducted down to 2 nm and compressively-strained 2- nm-thick ETB GOI and SGOI pMOSFETs are shown to operate with higher μ_h than the reported ones. Also, the impact of the ETB thickness on the electrical characteristics is quantitatively studied.