[19p-PB2-1~7] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[19p-PB2-4] Novel liquid ALD precursor for ULSI cobalt interconnect

〇Hideaki Machida¹, Sudoh Hiroshi¹, Ishikawa Masato¹, Ohshita Yoshio² (1.Gas-Phase Growth, 2.Toyota Inst. Tech.)

Keywords:semiconductor, interconnect, cobalt

Cobalt thin film is expected to be used in next generation ULSI interconnenct such as liner and more main material, because cobalt is able to avoid formation of big grain like copper. Metal amidinate complex is one of the candidate of ALD precursor for highly pure thin film. We reported new cobalt amidinate having melting point 38 degree C and deposition of low resistivity cobalt film. In this presentaion, we talk about novel cobalt amidinate precursor for ULSI mass production, it is liquid at room temperature.