[19p-PB4-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[19p-PB4-2] Mapping of structural defects in SiC wafers using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Ryo Mastuda¹, Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

Keywords:SiC, Schottky contact, scanning internal photoemission microscopy

We present our experimental results on Schottky contacts on p-6H-SiC wafers to characterize surface defects by using scanning internal photoemission microscopy.