[19p-PB4-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[19p-PB4-3] Detection of Defect Levels in 4H-SiC FET by Below-Gap Excitation Light

〇Kei Onodera¹, Norihiko Kamata¹, Yasuto Hijikata¹, Akinori Takeyama², Takeshi Oshima², Toru Yoshie³ (1.Saitama Univ., 2.QST, 3.Sanken Electric)

Keywords:SiC, Photoluminescence