Oral presentation

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 20, 2019 9:00 AM - 12:00 PM E311 (E311)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-E311-1] 3C-SiC n-MOS capacitor and n-MOSFET with SiO₂/Al₂O₃ insulator

〇Keisuke Yamamoto¹, Ryusei Oka¹, Dong Wang¹, Hiroshi Nakashima², Shigeomi Hishiki³, Keisuke Kawamura^2,3 (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ., 3.Air Water)

9:15 AM - 9:30 AM

△ [20a-E311-2] Charge analysis of SiO₂/Al₂O₃ gate dielectric on (111) oriented 3C-SiC

〇Ryusei Oka¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima², Shigeomi Hishiki³, Keisuke Kawamura³ (1.IGSES Kyushu Univ., 2.GIC Kyushu Univ., 3.Air water)

9:30 AM - 9:45 AM

△ [20a-E311-3] Dependence of channel mobility on doping concentration of p-body in POCl₃-annealed SiC MOSFETs

〇Koji Ito¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

9:45 AM - 10:00 AM

△ [20a-E311-4] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS

〇Anna Hosaka¹, Kohei Yamasue¹, Judith Woerle^2,3, Corrado Bongiorno⁴, Gabriel Ferro⁵, Ulrike Grossner², Massimo Camarda^2,3, Cho Yasuo¹ (1.Tohoku Univ., 2.ETH Zurich, 3.Paul Scherrer Institute, 4.CNR-IMM, 5.Lyon Univ.)

10:00 AM - 10:15 AM

△ [20a-E311-5] Deep interface states at nitrogen-passivated SiO₂/SiC
by photo-assisted C-V measurements

〇(D)Keita Tachiki¹, Kazutaka Kanegae¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

10:15 AM - 10:30 AM

△ [20a-E311-6] Analysis of Three-Level Charge Pumping Characteristics of
4H-SiC MOSFETs Considering Near-Interface Traps

〇Yuta Matsuya¹, Xufang Zhang¹, Dai Okamoto¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

10:45 AM - 11:00 AM

▼ [20a-E311-7] Significant effects on SiO₂/4H-SiC band alignment induced by the difference of employed crystal face and post oxidation annealing processes

〇(D)Taehyeon Kil¹, Koji Kita¹ (1.The Univ. of Tokyo)

11:00 AM - 11:15 AM

△ [20a-E311-8] Analysis of conduction mechanism of hole leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs

〇Hiroki Nemoto¹, Dai Okamoto¹, Xufang Zhang¹, Mitsuru Sometani², Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ.Tsukuba, 2.AIST)

11:15 AM - 11:30 AM

[20a-E311-9] Improved V_th stability of SiC MOSFET by post-nitridation CO₂ annealing

〇Takuji Hosoi¹, Momoe Ohsako¹, Koji Ito², Takayoshi Shimura¹, Tsunenobu Kimoto², Heiji Watanabe¹ (1.Osaka Univ., 2.Kyoto Univ.)

11:30 AM - 11:45 AM

[20a-E311-10] The Effects of Coulomb Scattering Centers at SiO₂/SiC interfaces on Electron Mobility in Inversion Layers

〇Tetsuo Hatakeyama^1,2, Mitsuru Sometani², Hirohisa Hirai², Shinsuke Harada² (1.Toyama Pref. Univ., 2.AIST)

11:45 AM - 12:00 PM

[20a-E311-11] Influence of non-uniform interface defect distribution on channel mobility in SiC MOSFET — Study based on local DLTS measurement and device simulation —

〇Kohei Yamasue¹, Yuji Yamagishi¹, Yasuo Cho¹ (1.Tohoku Univ.)

Oral presentation

[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 20, 2019 1:30 PM - 6:15 PM E311 (E311)

Hiroshi Yano(Univ. of Tsukuba), Yasunori Tanaka(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[20p-E311-1] Peculiarity of Wet Oxidation on C-face 4H-SiC: An EDMR Aspect

〇Takahide Umeda¹, Yohei Kagoyama¹, Kazuteru Tomita¹, Yuta Abe¹, Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada² (1.Univ. of Tsukuba, 2.AIST)

1:45 PM - 2:00 PM

[20p-E311-2] Electrically-Detected-Magnetic-Resonance (EDMR) Spectroscopy on Nitrided
4H-SiC(000)/SiO₂ Interfaces

〇(M1)Masato Narigasawa¹, Eito Higa¹, Mitsuru Sometani², Tetsuo Hatakeyama², Shinsuke Harada², Takahide Umeda¹ (1.Univ. of Tsukuba., 2.AIST.)

2:00 PM - 2:15 PM

[20p-E311-3] Ab-initio study on 4H-SiC(0-33-8)/SiO₂ interface structures and its electronic structures

〇Yuichiro Matsushita¹, Tetsuo Hatakeyama² (1.Tokyo Inst. Tech., 2.Toyama Pref. Univ.)

2:15 PM - 2:30 PM

[20p-E311-4] Physical Analysis of Remained Oxidation Byproducts as the Origins of Lattice
Distortion at 4H-SiC Surface

Adhi Dwi Hatmanto¹, 〇Koji Kita¹ (1.The Univ. of Tokyo)

2:30 PM - 2:45 PM

[20p-E311-5] Nitrogen atom desorption process during Ar annealing from 4H-SiC MOS interface on various crystal faces

〇(M1)Yusuke Samata¹, Koji Kita¹ (1.The Univ. of Tokyo)

3:00 PM - 3:15 PM

[20p-E311-6] [Young Scientist Presentation Award Speech] Forward Thermionic Field Emission Current and Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes

〇Masahiro Hara¹, Satoshi Asada¹, Takuya Maeda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM

[20p-E311-7] Characterization of pin diodes fabricated by ion implantation into high-purity semi-insulating SiC substrate

〇Mitsuaki Kaneko^1,2, Tsibizov Alexander², Kimoto Tsunenobu¹, Grossner Ulrike² (1.Kyoto Univ., 2.ETH Zurich)

3:30 PM - 3:45 PM

△ [20p-E311-8] Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs

〇Masashi Nakajima¹, Qimin Jin¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:45 PM - 4:00 PM

△ [20p-E311-9] Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Annealed at High Temperature or Thermally Oxidized

〇Chansoon Koo¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

4:00 PM - 4:15 PM

[20p-E311-10] Characterization of Electrical Properties of Ion Implanted 4H-SiC by THz-TDSE

〇(M1)Kiichi Sato¹, Takashi Fujii^1,3, Tsutomu Araki¹, Shinichiro Mouri¹, Kotaro Ishiji², Toshiyuki Iwamoto³, Ryuichi Sugie⁴ (1.Ritsumeikan Univ., 2.Kyushu Synchrotron Light Research Center, 3.PNP, 4.TRC)

4:15 PM - 4:30 PM

[20p-E311-11] Phonon-assisted optical absorption induced by Franz-Keldysh effect in
4H-SiC p-n junction diodes under electric field along <11-20> direction

〇Takuya Maeda¹, Xilun Chi¹, Hajime Tanaka¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

4:45 PM - 5:00 PM

[20p-E311-12] Expansion of Shockley Stacking Faults in 4H-SiC Epitaxial Layer by Forward Bias Current or Ultraviolet Irradiation

〇Kazumi Takano¹, Yoshihiko Ohsaki¹, Yasuyuki Igarashi¹ (1.ITES)

5:00 PM - 5:15 PM

△ [20p-E311-13] Theoretical Analysis of Carrier Lifetimes in p-type SiC

〇Shoma Yamashita¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

[20p-E311-14] Estimation of high injection lifetime and diffusion length in a 4H-SiC thick epilayer

〇(M2)Keisuke Nagaya¹, Takashi Hirayama¹, Akira Miyasaka², Kazutoshi Kojima³, Tomohisa Kato³, Hajime Okumura³, Masashi Kato¹ (1.NITech., 2.Showa Denko K.K., 3.AIST.)

5:30 PM - 5:45 PM

[20p-E311-15] Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

〇(M1)Takuma Narahara^1,2, Shinichiro Sato², Kazutoshi Kojima³, Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.AIST)

5:45 PM - 6:00 PM

[20p-E311-16] The effect of annealing temperature for ODMR signals of silicon vacancy in SiC crystal

〇(M2)Yoji Chiba^1,2, Yuichi Yamazaki², Takahiro Makino², Shin-ichiro Sato², Naoto Yamada², Takahiro Satoh², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST)

6:00 PM - 6:15 PM

[20p-E311-17] Optically detected magnetic resonance of 3D arrayed silicon vacancies in SiC pn diodes

〇Yuichi Yamazaki¹, Yoji Chiba^1,2, Shin-Ichiro Sato¹, Takahiro Makino¹, Naoto Yamada¹, Takahiro Satoh¹, Yasuto Hijikata², Kazutoshi Kojima³, Hidekazu Tsuchida⁴, Norihiro Hoshino⁴, Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.AIST, 4.CRIEPI)

Oral presentation

[21a-E311-1~7] 15.6 Group IV Compound Semiconductors (SiC)

Sat. Sep 21, 2019 9:00 AM - 10:45 AM E311 (E311)

Shunta Harada(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-E311-1] The effect of Co addition to Si-Cr solvent on the morphology in solution growth of SiC

〇Shingo Ehara¹, Naomichi Tsuchimoto¹, Koki Suzuki¹, Koangyong Hyun¹, Toshinori Taishi¹ (1.Shinshu Univ. (Eng.))

9:15 AM - 9:30 AM

[21a-E311-2] Vapor-phase polycrystalline SiC coating by TSSG-applied technique

〇Yuta Yokobayashi¹, Naomichi Tsuchimoto¹, Yuki Kagami², Syuichi Yamamoto², Koki Suzuki¹, Toshinori Taishi¹ (1.Shinsyu Univ. (Eng.), 2.Aszac Inc.)

9:30 AM - 9:45 AM

[21a-E311-3] Effect of a SiC Low-Temperature Buffer Layer on SiC Epitaxial Growth on Top of an AlN/Si(110) substrate

Yuki Nara¹, 〇Hiroki Kasai¹, Hideki Nakazawa¹ (1.Hirosaki Univ.)

9:45 AM - 10:00 AM

[21a-E311-4] Gaseous species emitted from byproduct layer formed in the exhaust tube of SiC epitaxial reactor

Ichiro Mizushima¹, 〇Hitoshi Habuka² (1.NuFlare Technology, 2.Yokohama Nat. Univ.)

10:00 AM - 10:15 AM

[21a-E311-5] Influence of Reaction Heat on SiC Epitaxial Reactor Cleaning Using ClF₃ Gas

〇Masaya Hayashi¹, Hitoshi Habuka¹, Keisuke Kurashima¹, Hideki Ito², Shin-ichi Mitani², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama Nat. Univ, 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

10:15 AM - 10:30 AM

[21a-E311-6] Dry etcher design for 200 mm-diameter SiC wafer by using ClF₃ gas

〇Ryohei Kawasaki¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

10:30 AM - 10:45 AM

[21a-E311-7] Effect of total gas flow rate on etching rate uniformity improvement over 4H-SiC wafer using ClF₃ gas

〇Kenta Irikura¹, Shogo Okuyama¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

Poster presentation

[19p-PB4-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 19, 2019 1:30 PM - 3:30 PM PB4 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[19p-PB4-1] Analysis of Solution Structure in Solution growth of SiC with Na flux

〇Takuro Murata¹, Takahiro Kawamura¹ (1.Mie Univ.)

1:30 PM - 3:30 PM

[19p-PB4-2] Mapping of structural defects in SiC wafers using scanning internal photoemission microscopy

〇Kenji Shiojima¹, Ryo Mastuda¹, Masashi Kato² (1.Univ. of Fukui, 2.Nagoya Inst. of Tech.)

1:30 PM - 3:30 PM

[19p-PB4-3] Detection of Defect Levels in 4H-SiC FET by Below-Gap Excitation Light

〇Kei Onodera¹, Norihiko Kamata¹, Yasuto Hijikata¹, Akinori Takeyama², Takeshi Oshima², Toru Yoshie³ (1.Saitama Univ., 2.QST, 3.Sanken Electric)

1:30 PM - 3:30 PM

[19p-PB4-4] Thermal Oxidation of 4H-SiC Surface at Lower Temperature: A Difference between Si and C Faces

〇Haruto Koriyama¹, Yoshiharu Enta¹ (1.Hirosaki Univ.)

1:30 PM - 3:30 PM

[19p-PB4-5] Oxidation temperature dependence of electrical properties at SiO2/SiC interface formed by Ba-enhanced oxidation

〇Hidenori Tsuji¹, Yutaka Terao¹, Takuji Hosoi², Xufang Zhang³, Hiroshi Yano³, Takayoshi Shimura², Heiji Watanabe² (1.Fuji Electric, 2.Osaka Univ., 3.U. Tsukuba)

1:30 PM - 3:30 PM

[19p-PB4-6] Distinguishing nitrogen-containing sites in SiO₂/SiC by X-ray absorption spectroscopy

〇Noritake Isomura¹, Keita Kataoka¹, Yukihiko Watanabe¹, Yasuji Kimoto¹ (1.Toyota CRDL)

1:30 PM - 3:30 PM

[19p-PB4-7] Full 4H-SiC Pixel Devices for Radiation-Hardened UV Image Sensors

〇(M1)Kenta Nishigaito¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ., 2.QST, 3.AIST)

1:30 PM - 3:30 PM

[19p-PB4-8] Gamma-rays irradiation effect of normally-off 4H-SiC JFETs

〇Akinori Takeyama¹, Keigo Shimizu², Takahiro Makino¹, Yuichi Yamazaki¹, Takeshi Ohshima¹, Shin-ichiro Kuroki³, Yasunori Tanaka² (1.QST, 2.AIST, 3.Hiroshima Univ.)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [20a-E311-2] Charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC

△ [20a-E311-3] Dependence of channel mobility on doping concentration of p-body in POCl3-annealed SiC MOSFETs

△ [20a-E311-4] Observation of interface state density distribution in macrostepped SiO2/SiC using local-DLTS

△ [20a-E311-5] Deep interface states at nitrogen-passivated SiO2/SiCby photo-assisted C-V measurements

△ [20a-E311-6] Analysis of Three-Level Charge Pumping Characteristics of4H-SiC MOSFETs Considering Near-Interface Traps

▼ [20a-E311-7] Significant effects on SiO2/4H-SiC band alignment induced by the difference of employed crystal face and post oxidation annealing processes

△ [20a-E311-8] Analysis of conduction mechanism of hole leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs

[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

△ [20p-E311-8] Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs

△ [20p-E311-9] Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Annealed at High Temperature or Thermally Oxidized

△ [20p-E311-13] Theoretical Analysis of Carrier Lifetimes in p-type SiC

[21a-E311-1~7] 15.6 Group IV Compound Semiconductors (SiC)

[19p-PB4-1~8] 15.6 Group IV Compound Semiconductors (SiC)

Authentication

△ [20a-E311-2] Charge analysis of SiO₂/Al₂O₃ gate dielectric on (111) oriented 3C-SiC

△ [20a-E311-3] Dependence of channel mobility on doping concentration of p-body in POCl₃-annealed SiC MOSFETs

△ [20a-E311-4] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS

△ [20a-E311-5] Deep interface states at nitrogen-passivated SiO₂/SiC
by photo-assisted C-V measurements

△ [20a-E311-6] Analysis of Three-Level Charge Pumping Characteristics of
4H-SiC MOSFETs Considering Near-Interface Traps

▼ [20a-E311-7] Significant effects on SiO₂/4H-SiC band alignment induced by the difference of employed crystal face and post oxidation annealing processes