Dependence of channel mobility on doping concentration of p-body in POCl<sub>3</sub>-annealed SiC MOSFETs

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 20, 2019 9:00 AM - 12:00 PM E311 (E311)

9:30 AM - 9:45 AM

〇Koji Ito¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

Keywords:SiC, MOS, MOSFET