[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-2] Electrically-Detected-Magnetic-Resonance (EDMR) Spectroscopy on Nitrided
4H-SiC(000)/SiO₂ Interfaces

〇(M1)Masato Narigasawa¹, Eito Higa¹, Mitsuru Sometani², Tetsuo Hatakeyama², Shinsuke Harada², Takahide Umeda¹ (1.Univ. of Tsukuba., 2.AIST.)

Keywords:SiC, MOS interface defect, ESR

電流検出電子共鳴分光の結果から、C面窒化4H-SiC/SiO₂界面欠陥について議論する。