[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-3] Ab-initio study on 4H-SiC(0-33-8)/SiO₂ interface structures and its electronic structures

〇Yuichiro Matsushita¹, Tetsuo Hatakeyama² (1.Tokyo Inst. Tech., 2.Toyama Pref. Univ.)

Keywords:SiC, interface state, interface

Recently, NO annealed 4H-SiC(0-33-8)/SiO₂ interfaces exhibit higher carrier mobilities and get attention. However, it is not clarified yet why the 4H-SiC(0-33-8)/SiO₂ interfaces are preferable. In this study, we have constructed a 4H-SiC(0-33-8)/SiO₂ interface model based on the density-functional calculations and clarified it from the viewpoint of the interface structure.