[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-4] Physical Analysis of Remained Oxidation Byproducts as the Origins of Lattice
Distortion at 4H-SiC Surface

Adhi Dwi Hatmanto¹, 〇Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:Surface strain, FTIR, Oxidation

We have reported an oxidation-induced significant lattice distortion of SiC, locally in the vicinity of the SiO₂/SiC interface and its relaxation by Ar annealing. It was also suggested that the lattice distortion introduction and relaxation would be attributable to the formation and decomposition of oxidation-induced byproducts, even though the existence of such remaining byproducts have not yet been physically clarified. In this work, we investigate the chemical bonds in thermally-oxidized 4H-SiC surface region by Fourier-transform infrared spectroscopy with attenuated total reflection mode (FTIR-ATR) to physically clarify the existence of remaining byproducts of thermal oxidation in the surface region. It was clearly indicated that the anomalous surface lattice distortion is strongly correlated to the amount of Si-O, C-O, and C=O structures formed in the surface region of SiC.