Nitrogen atom desorption process during Ar annealing from 4H-SiC MOS interface on various crystal faces

Yusuke Samata; Koji Kita

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 20, 2019 1:30 PM - 6:15 PM E311 (E311)

Hiroshi Yano(Univ. of Tsukuba), Yasunori Tanaka(AIST)

2:30 PM - 2:45 PM

[20p-E311-5] Nitrogen atom desorption process during Ar annealing from 4H-SiC MOS interface on various crystal faces

〇(M1)Yusuke Samata¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:nitridation, desorption, X-ray photoelectron spectroscopy

In this research, focusing on nitrogen atom desorption process during Ar annealing from 4H-SiC nitrided MOS interface, nitrogen atom bonding strengths in the interface structure on differnt crystal faces are compared based on XPS analysis.