[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-1] Peculiarity of Wet Oxidation on C-face 4H-SiC: An EDMR Aspect

〇Takahide Umeda¹, Yohei Kagoyama¹, Kazuteru Tomita¹, Yuta Abe¹, Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada² (1.Univ. of Tsukuba, 2.AIST)

Keywords:SiC, MOS interface defect, ESR

We discuss relationships between interface defects and wet-oxidation process on C-face 4H-SiC. Electrically-detected-magnetic-resonance (EDMR) spectroscopy revealed two types of vacancy-type defects (C_SiV_C and V_SiV_C) formed at C-face 4H-SiC/SiO₂ interfaces after wet oxidation. Thus, the wet oxidation of C face is characterized by a selective formation of vacancy-type defects at the interface, which is a unique feature not seen in other oxidation processes on C face as well as other surfaces. Furthermore, looking in detailed at atomic structures of the observed vacancy-type defects, we found another selection rule in their formation, which is supposedly related to the atomic structure of C face as well as its oxidation mechanism.