[21a-E311-1~7] 15.6 Group IV Compound Semiconductors (SiC)

[21a-E311-5] Influence of Reaction Heat on SiC Epitaxial Reactor Cleaning Using ClF₃ Gas

〇Masaya Hayashi¹, Hitoshi Habuka¹, Keisuke Kurashima¹, Hideki Ito², Shin-ichi Mitani², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama Nat. Univ, 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

Keywords:cleaning, Silicon Carbide, Dry etching

At the time of SiC epitaxial growth, SiC film is also deposited on the susceptor, which causes some problems. Therefore, a cleaning technique is required to quickly remove the SiC film. Until now, the method has been proposed to protect the susceptor using a pyrolytic carbon film and remove the SiC deposited film with ClF₃ gas, and it is shown that the cleaning temperature can be raised to 570°C by using a purified pyrolytic carbon film. We cleaned the SiC film which was formed on the purified pyrolytic carbon film with ClF₃ gas this time.