[21a-E311-1~7] 15.6 Group IV Compound Semiconductors (SiC)

[21a-E311-4] Gaseous species emitted from byproduct layer formed in the exhaust tube of SiC epitaxial reactor

Ichiro Mizushima¹, 〇Hitoshi Habuka² (1.NuFlare Technology, 2.Yokohama Nat. Univ.)

Keywords:Silicon carbide, epitaxial growth, Byproduct layer

Silicon carbide is used for various power devices. Because the byproduct layer formed at the exhaust tube during the SiC epitaxial growth is flammable, the chemical behaviour of the byproduct layer should be studied in order to avoid any accident. In this study, the gaseous species emitted from byproduct layer formed in the exhaust tube of SiC epitaxial reactor was evaluated.