The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[21a-E311-1~7] 15.6 Group IV Compound Semiconductors (SiC)

Sat. Sep 21, 2019 9:00 AM - 10:45 AM E311 (E311)

Shunta Harada(Nagoya Univ.)

9:00 AM - 9:15 AM

[21a-E311-1] The effect of Co addition to Si-Cr solvent on the morphology in solution growth of SiC

Shingo Ehara1, Naomichi Tsuchimoto1, Koki Suzuki1, Koangyong Hyun1, Toshinori Taishi1 (1.Shinshu Univ. (Eng.))

Keywords:solution growth of SiC, surface morphology