[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-7] Characterization of pin diodes fabricated by ion implantation into high-purity semi-insulating SiC substrate

〇Mitsuaki Kaneko^1,2, Tsibizov Alexander², Kimoto Tsunenobu¹, Grossner Ulrike² (1.Kyoto Univ., 2.ETH Zurich)

Keywords:SiC, ion implantation, pin diode