[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-10] Characterization of Electrical Properties of Ion Implanted 4H-SiC by THz-TDSE

〇(M1)Kiichi Sato¹, Takashi Fujii^1,3, Tsutomu Araki¹, Shinichiro Mouri¹, Kotaro Ishiji², Toshiyuki Iwamoto³, Ryuichi Sugie⁴ (1.Ritsumeikan Univ., 2.Kyushu Synchrotron Light Research Center, 3.PNP, 4.TRC)

Keywords:silicon carbide, ion implantation, Terahertz time domain spectroscopy ellipsometry

Our group is planning to high dose ion implantation to 4H-SiC with 3 layers (n-SiC substrate/ SiC buffer layer/ SiC epitaxial layer) used in practical devises. This study, we simulated whether THz-TDSE is able to evaluate p-type and n-type ion implanted layers assumed to be formed 100% electrical activation. As a result, ellipsometric parameter psi decreased both n-type and p-type, and we considered that it is possible to evaluate the electrical properties of ion implanted 4H-SiC using THz-TDSE by observing the rate of decreasing of ellipsometric parameter psi.