3:45 PM - 4:00 PM
△ [20p-E311-9] Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Annealed at High Temperature or Thermally Oxidized
Keywords:semi-insulating SiC, intrinsic point defect, resistivity
Presentation information
Oral presentation
15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)
[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)
Fri. Sep 20, 2019 1:30 PM - 6:15 PM E311 (E311)
Hiroshi Yano(Univ. of Tsukuba), Yasunori Tanaka(AIST)