[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-9] Improved V_th stability of SiC MOSFET by post-nitridation CO₂ annealing

〇Takuji Hosoi¹, Momoe Ohsako¹, Koji Ito², Takayoshi Shimura¹, Tsunenobu Kimoto², Heiji Watanabe¹ (1.Osaka Univ., 2.Kyoto Univ.)

Keywords:SiC, MOSFET, reliability

Improved threshold voltage stability against bias-temperature stress in SiC MOSFET was demonstrated by post-nitridation CO₂ annealing. The amount of N atoms at SiO₂/SiC interface was found tobe controlled by CO₂ annealing condition.