[21a-E311-1~7] 15.6 Group IV Compound Semiconductors (SiC)

[21a-E311-7] Effect of total gas flow rate on etching rate uniformity improvement over 4H-SiC wafer using ClF₃ gas

〇Kenta Irikura¹, Shogo Okuyama¹, Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

Keywords:silicon carbide, etching

Semiconductor silicon carbide (SiC) is used for a power control semiconductor element. In previous studies, we have fabricated and verified an apparatus that can quickly etch an entire 50 mm diameter SiC wafer using chlorine trifluoride (ClF₃) gas. In this study, we attempted to flatten the etch rate distribution across the single crystal 4H-SiC wafer (C plane) by increasing the total gas flow rate.