[19p-PB4-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[19p-PB4-5] Oxidation temperature dependence of electrical properties at SiO2/SiC interface formed by Ba-enhanced oxidation

〇Hidenori Tsuji¹, Yutaka Terao¹, Takuji Hosoi², Xufang Zhang³, Hiroshi Yano³, Takayoshi Shimura², Heiji Watanabe² (1.Fuji Electric, 2.Osaka Univ., 3.U. Tsukuba)

Keywords:semiconductor, SiC, MOS