The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 20, 2019 9:00 AM - 12:00 PM E311 (E311)

Yu-ichiro Matsushita(Tokyo Tech)

9:00 AM - 9:15 AM

[20a-E311-1] 3C-SiC n-MOS capacitor and n-MOSFET with SiO2/Al2O3 insulator

Keisuke Yamamoto1, Ryusei Oka1, Dong Wang1, Hiroshi Nakashima2, Shigeomi Hishiki3, Keisuke Kawamura2,3 (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ., 3.Air Water)

Keywords:3C-SiC, MOS capacitor, MOSFET