[20a-B31-1~12] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [20a-B31-10] Effect of Solution Processed High-k Hybrid Gate Insulator Film Curing Temperature on Amorphous In-Ga-Zn-O Thin-Film Transistors Performance

〇Ployrung Kesorn¹、Juan Paolo Bermundo¹、Naofumi Yoshida²、Toshiaki Nonaka²、Mami N. Fujii¹、Yasuaki Ishikawa¹、Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology、2.Merck Performance Material Ltd.)

キーワード：high performance IGZO TFTs, hybrid gate insulator material, high-k gate insulator

To fabricate high performance amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) for flexible display applications, low temperature process is required. Moreover, using high-k material to replace conventional SiO₂ gate insulators in a-IGZO TFTs has been widely studied due to limitation in miniaturization and dielectric property. Therefore, organic-inorganic hybrid material can be a way to enable curing in lower process temperatures. In this study, high-k BaTiO₃ nanoparticles and flexible transparent Poly-siloxane (Poly-SX) composition was used to deposit solution processed gate insulator. This research shows performances of solution processed hybrid gate insulated a-IGZO TFTs with at different film curing temperature of 180ºC, 300ºC and 500ºC. All TFTs exhibit switching behavior for all curing temperature conditions.