[20a-B31-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [20a-B31-11] Stability Improvement of Solution Processed Amorphous In-Zn-O Thin-Film Transistors via Low Temperature Solution Processed Passivation

〇(M2)Aimi Syairah Safaruddin¹, Juan Paolo Bermundo¹, Naofumi Yoshida², Toshiaki Nonaka², Mami N. Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST for Nara Institute of Science and Technology, 2.MERCK for Merck Performance Materials Ltd.)

Keywords:hybrid organic inorganic passivation, solution process, low temperature

This research aims to improve the stability of amorphous InZnO (a-IZO) thin-film transistors by a hybrid Polysilsesquioxane (P-PSQ) passivation. This passivation materials can be deposited via spin coating technique and can be cured at low temperature due to incorporation of inorganic silica content. P-PSQ materials greatly improve the electrical performance of a-IZO TFTs as well as maintaining the device stability upon stress with positive bias and negative bias stress tests. Additional humidity stress test was conducted at a relative humidity of 95% to investigate the barrier ability of a-IZO and P-PSQ films. TFTs passivated with P-PSQ passivation showed a minimal change after humidity stress test compared to unpassivated a-IZO TFTs. Higher organic constituents in P-PSQ film formed a high crosslinking density that makes the film more hydrophobic compared to IZO film. Overall, employment of P-PSQ passivation help in improving the electrical performance and stability despite annealed at low temperature.