Session information

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B31-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 20, 2019 9:00 AM - 12:15 PM B31 (B31)

Yukiharu Uraoka(NAIST), Keisuke Ide(Tokyo Tech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-B31-1] Electronic states in Ar+O₂+H₂ sputtered In–Ga–Zn–O films

〇(D)Yusaku Magari¹, Kentaro Masuda¹, Hisao Makino^1,2, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Center for Nanotech.)

9:15 AM - 9:30 AM

[20a-B31-2] Hot-wire hydrogenation to In-Sn-Zn-O film and evaluation of the TFT reliability

〇Kousaku Shimizu¹ (1.Nihon Univ.)

9:30 AM - 9:45 AM

[20a-B31-3] Carrier transport properties in oxide semiconductor heterojunction channel

〇Daichi Koretomo¹, Mamoru Furuta^1,2 (1.Kochi univ. of tech., 2.Center for nanotch.)

9:45 AM - 10:00 AM

[20a-B31-4] Development of High Quality IGZO Deposition Technology

〇Mitsuru Ueno¹, Taku Hanna¹, Motoshi Kobayash¹, Makoto Arai¹, Junya Kiyota¹ (1.ULVAC,Inc.)

10:00 AM - 10:15 AM

[20a-B31-5] Low temperature fabrication of In–Ga–Zn–O thin film transistor with anodic–Al₂O₃

〇(M1C)Marin Mori¹, Daichi Koretomo¹, Moriya Kono¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Technology, 2.KUT Nanotech inst.)

10:15 AM - 10:30 AM

[20a-B31-6] Crystallinity and electrical properties of Ar+O₂+H₂ sputtered In–Ga–O thin films

〇(M1C)Kenta Shimpo¹, Daichi Koretomo¹, Mamoru Furuta¹, Emi Kawashima², Yuki Tsuruma² (1.Kochi Univ. of Technology, 2.Idemitsu Kosan)

10:45 AM - 11:00 AM

△ [20a-B31-7] Degradation phenomenon of reliability in high mobility oxide thin-film transistor

〇Takanori Takahashi¹, Mami N. Fujii¹, Miki Miyanaga², Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Sumitomo Electric Industries, Ltd.)

11:00 AM - 11:15 AM

△ [20a-B31-8] Reliability of oxide thin-film transistor toward sensor application

〇Yuki Hashima¹, Takanori Takahashi¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

11:15 AM - 11:30 AM

△ [20a-B31-9] Characteristics of oxide TFT using carbon-doped In₂O₃ thin films
by low-temperature ALD

〇Riku Kobayashi^1,2, Toshihide Nabatame², Kazunori Kurishima^2,3, Takashi Onaya^1,2,4, Akihiko Ohi², Naoki Ikeda², Takahiro Nagata², Kazuhito Tsukagoshi², Atsushi Ogura¹ (1.Meiji Univ., 2.WPI-MANA NIMS, 3.JSPS Research Fellow PD, 4.JSPS Research Fellow DC)

11:30 AM - 11:45 AM

▼ [20a-B31-10] Effect of Solution Processed High-k Hybrid Gate Insulator Film Curing Temperature on Amorphous In-Ga-Zn-O Thin-Film Transistors Performance

〇Ployrung Kesorn¹, Juan Paolo Bermundo¹, Naofumi Yoshida², Toshiaki Nonaka², Mami N. Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology, 2.Merck Performance Material Ltd.)

11:45 AM - 12:00 PM

▼ [20a-B31-11] Stability Improvement of Solution Processed Amorphous In-Zn-O Thin-Film Transistors via Low Temperature Solution Processed Passivation

〇(M2)Aimi Syairah Safaruddin¹, Juan Paolo Bermundo¹, Naofumi Yoshida², Toshiaki Nonaka², Mami N. Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST for Nara Institute of Science and Technology, 2.MERCK for Merck Performance Materials Ltd.)

12:00 PM - 12:15 PM

▼ [20a-B31-12] All-Solution Approach to Oxide Thin-Film Transistor Fabrication using Photo-assisted Methods

〇(D)Dianne Cabrejas Corsino¹, Juan Paolo Bermundo¹, Mami Fujii¹, Yasuaki Ishikawa¹, Hiroshi Ikenoue², Yukiharu Uraoka¹ (1.NAIST, 2.Kyushu Univ.)

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