[20a-B31-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B31-4] Development of High Quality IGZO Deposition Technology

〇Mitsuru Ueno¹, Taku Hanna¹, Motoshi Kobayash¹, Makoto Arai¹, Junya Kiyota¹ (1.ULVAC,Inc.)

Keywords:Transparent Oxide Semiconductors, IGZO, Sputter

To evaluate the impact of plasma density on TFT transfer characteristics during IGZO channel deposition process, 3 different magnetic field strengths in IGZO magnetron sputter have been tested by adjusting magnet settings in the sputter cathode. It has been found that higher magnetic field strength resulted in improved reliability of IGZO TFT characteristics, without any obvious effect on initial performance.