[20a-B31-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B31-5] Low temperature fabrication of In–Ga–Zn–O thin film transistor with anodic–Al₂O₃

〇(M1C)Marin Mori¹, Daichi Koretomo¹, Moriya Kono¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Technology, 2.KUT Nanotech inst.)

Keywords:TFT

In this research, we succeeded in the fabrication of TFT that performs all processes at 150 ° C or less.
It has been proved that hydrogen addition at the time of IGZO film formation acts as a carrier suppression, and ON / OFF at 150 ° C is possible.Al₂O₃ is used a gate insulater which has a high dielectric constant and can be formed at room temperature by anodic oxidation, compared to CVD-SiO₂.By combining these, a process technology of 150 ° C or less was realized.