[20a-B31-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B31-6] Crystallinity and electrical properties of Ar+O₂+H₂ sputtered In–Ga–O thin films

〇(M1C)Kenta Shimpo¹, Daichi Koretomo¹, Mamoru Furuta¹, Emi Kawashima², Yuki Tsuruma² (1.Kochi Univ. of Technology, 2.Idemitsu Kosan)

Keywords:oxide semiconductor, IGO, IGZO

In–Ga–Zn–O based thin film transistors are expected to be applied to next generation displays. On the other hand, there is also a strong demand for materials with higher electron mobility compared to low temperature polysilicon based TFTs. Among such materials, In–Ga–O (IGO) can be a good candidate due to several reasons a) the crystallinity control by adding water (H₂O) during deposition process and b) the reported value of high electron mobility 39.1 cm²/Vs. Moreover, we have already reported that it is possible to decrease the fabrication process temperature of IGZO based TFT by introducing hydrogen during the deposition process. In this study, we investigated the hydrogen introducing ratio effect on IGO films properties. The highest Hall mobility was 115 cm²/Vs.