[20a-C212-1~4] Hydrogen in oxides and its role

[20a-C212-1] Hydrogen in oxides, its contribution to charge compensation and stability

〇Naoki Ohashi¹, Takeo Ohsawa¹, Isao Sakaguchi¹ (1.NIMS)

Keywords:Oxide, Charge Compensation, Hydrogen

In recent years, the presence of hydrogen impurities in oxides has come to be strongly considered. In the past, the electric conductivity of oxide semiconductors was generally described by non-stoichiometry which changes with the synthetic environment. However, it has been found that the physical properties of oxides can be more rationally explained by considering not only the non-stoichiometry but also unintentionally introduced hydrogen impurities. Here, the behavior of hydrogen impurities in a typical oxide semiconductor is reviewed based on experimental results using single crystals.